Electrical Properties of MetaI-Diamond-Like-Nanocomposite (Me-DLN) Contacts to 6H SiC
نویسندگان
چکیده
We have fabricated tungsten-diamond-like-nanocomposite (W-DLN) Schottky contacts on n-type and p-type 6H SiC (Si-face). The as-deposited n-type and ptype contacts are rectifying and measurement results suggest that the electrical characteristics are dominated by the properties of the tungsten SiC interface. The n-type contacts have a reverse leakage current density of 4.1 x 10 -3 Acm -2 and the p-type contacts have a reverse leakage current density of 1.4 x 10 -7 Acm -2 at -10 V. The n-type contacts have an current-voltage (I-V) extracted effective r of 0.7 eV with an ideality factor of 1.2 and a capacitance-voltage (C-V) extracted 0Bn of 1.2 eV. The p-type contacts have an I-V extracted effective 9 of 1.8 eV with an ideality factor of 1.7. Non-ideal I-V and C-V characteristics may be due to surface damage during W-DLN deposition.
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