Vacancy and interstitial depth profiles in ion-implanted silicon
نویسندگان
چکیده
An experimental method of studying shifts between concentration-versus-depth profiles of vacancyand interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy–oxygen center, and the interstitial profile, represented by the interstitial carbon–substitutional carbon pair, are obtained at the same sample temperature by varying the duration of the filling pulse. The effect of the capture in the Debye tail has been extensively studied and taken into account. Thus, the two profiles can be recorded with a high relative depth resolution. Using low doses, point defects have been introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature. The effect of the angle of ion incidence has also been investigated. For all implantation conditions the peak of the interstitial profile is displaced towards larger depths compared to that of the vacancy profile. The amplitude of this displacement increases as the width of the initial point defect distribution increases. This behavior is explained by a simple model where the preferential forward momentum of recoiling silicon atoms and the highly efficient direct recombination of primary point defects are taken into account. © 2003 American Institute of Physics. @DOI: 10.1063/1.1528304#
منابع مشابه
Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation
متن کامل
Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Silicon samples of n-type have been implanted at room temperature with 5.6-MeV Si ions to a dose of 2310 cm and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V2) and vacancy-oxygen ~VO! centers were studied in detail using deep-level transient spectroscopy. The decrease of V2 cent...
متن کاملA Detailed Physical Model for Ion Implant Induced Damage in Silicon
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experime...
متن کاملMolecular Dynamics Simulations of Atomic Collisions for Ion Irradiation Experiments
An understanding of the way damage is formed during ion implantation of solids is very important in many research and industrial applications. One of the best ways to study damage formation theoretically is provided by molecular dynamics simulations, in which the movement of atoms is followed by solving numerically the equations of motion. The purpose of work described in this thesis has been t...
متن کاملاندازهگیری نمای فراوانی فسفر کشت شده فراسطحی در سیلیسیوم
We have initiated a study to extract concentration profiles of ultra shallow phosphorous implants in silicon complementing published work on ultra shallow boron implant profiles. There is an ever-increasing interest in the production of p-n junctions in silicon to create the new generations of ultra large scale integrated (ULSI) devices. Such junctions can be formed by implantation do pants (...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2002