Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5PÕGaAs heterostructures
نویسندگان
چکیده
A configuration of misfit dislocation dipoles is observed in a Ga0.5In0.5P heterostructure grown by solid-source molecular-beam epitaxy on GaAs. The dipole dislocations are mostly of 60° type, separated by ;3.5 nm. The dislocations are not produced by conventional lattice mismatch, rather, they could be the result of lateral compositional modulation in the Ga0.5In0.5P epilayer. © 2000 American Institute of Physics. @S0003-6951~00!02528-6#
منابع مشابه
Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures
The quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exi...
متن کاملFormation of misfit dislocations in strained-layer GaAs/In
The Open University's repository of research publications and other research outputs Formation of misfit dislocations in strained-layer GaAs/In x Ga 1–x As/GaAs heterostructures during postfabrication thermal processing Journal Article (2003). Formation of misfit dislocations in strained-layer GaAs/InxGa1–xAs/GaAs heterostructures during postfabrication thermal processing. It is demonstrated th...
متن کاملStructural perfection in poorly lattice matched heterostructures
Continuum elastic theory is applied to the formation of misfit dislocations and point defects in strained layer structures. Explicit calculations of the energies of misfit dislocations in the doubleand single-kink geometries yield line tensions below which strained films are stable with respect to defect formation. Our results yield a mismatch-dependent stability limit which, in the double kink...
متن کاملAnisotropic strain relaxation and surface morphology related to asymmetry in the formation of misfit dislocations in InGaAs/GaAs heterostructures
Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch (less than 1%), grown by metalorganic vapour-phase epitaxy have been studied by the transmission electron microscopy, atomic force microscopy as well as X-ray diffractometry. A regular network of 60° misfit dislocations formed at the (001) interface in two orthogonal 〈110〉 crystallographic directions has been revealed....
متن کاملPerfect crystals grown from imperfect interfaces
The fabrication of advanced devices increasingly requires materials with different properties to be combined in the form of monolithic heterostructures. In practice this means growing epitaxial semiconductor layers on substrates often greatly differing in lattice parameters and thermal expansion coefficients. With increasing layer thickness the relaxation of misfit and thermal strains may cause...
متن کامل