Power Minimization by Simultaneous Dual - Vth Assignment and Gate -

نویسندگان

  • Liqiong Wei
  • Kaushik Roy
  • Cheng-Kok Koh
چکیده

|Gate-sizing is an eeective technique to optimize CMOS circuits for dynamic power dissipation and performance while dual-V th (threshold voltage) CMOS is ideal for leakage power reduction in low voltage circuits. This paper focuses on simultaneous dual-V th assignment and gate-sizing to minimize the total power dissipation while maintaining high performance. An accurate power dissipation model that includes short-circuit, switching, and leakage power is derived and used in our optimization. Results show that more than 20% and 40% power reductions are achievable for circuits at high and low switching activities, respectively, compared to single low-V th CMOS circuits while maintaining performance.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

DOE-ILP Assisted Conjugate-Gradient Optimization of High-κ/Metal-Gate Nano-CMOS SRAM

Low power consumption and stability in Static Random Access Memories (SRAMs) is essential for embedded multimedia and communication applications. This paper presents a novel design flow for power minimization of nano-CMOS SRAMs, while maintaining their stability. A 32 nm High-κ/Metal-Gate SRAM has been used as example circuit. The baseline SRAM circuit is subjected to power minimization using a...

متن کامل

Power Minimization by Simultaneous Dual-Kh Assignment and Gate-sizing

Gate-sizing is an effective technique to optimize CMOS circuits for dynamic power dissipation and performance while dual-V,h (threshold voltage) CMOS is ideal for leakage power reduction in low voltage circuits. This paper focuses on simultaneous dual-V,h assignment and gate-sizing t o minimize the total power dissipation while maintaining high performance. An accurate power dissipation model t...

متن کامل

ILP-based Supply and Threshold Voltage Assignment For Total Power Minimization

In this paper we present an ILP-based method to simultaneously assign supply and threshold voltages to individual gates for dynamic and leakage power minimization. In our three-step approach, low power min-flipflop (FF) retiming is first performed to reduce the clock period while taking the FF delay/power into consideration. Next, the subsequent voltage assignment formulated in ILP makes the be...

متن کامل

Novel dual-Vth independent-gate FinFET circuits

This paper describes gate work function and oxide thickness tuning to realize novel circuits using dual-Vth independent-gate FinFETs. Dual-Vth FinFETs with independent gates enable series and parallel merge transformations in logic gates, realizing compact low power alternatives. Furthermore, they also enable the design of a new class of compact logic gates with higher expressive power and flex...

متن کامل

Interdependency Study of Process and Design Parameter Scaling for Power Optimization of Nano-CMOS Circuits under Process Variation

In sub-65nm CMOS technology, switching power and gate as well as subthreshold leakage power are the major components of total power dissipation. To achieve power-performance tradeoffs one varies different process (Tox, K, Vth,) and design parameters (VDD, W). Techniques for (i) dual-K and dual-Tox have been proposed to reduce gate leakage, (ii) dual (multiple)-Vth has been introduced to minimiz...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2000