Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells
نویسندگان
چکیده
in InGaN/GaN multiple quantum wells L. Dong, J. V. Mantese, V. Avrutin, € U. € Ozg€ ur, H. Morkoç, and S. P. Alpay Department of Physics, University of Connecticut, Storrs, Connecticut 06269, USA United Technology Research Center, East Hartford, Connecticut 06108, USA Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072, USA Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, USA
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