InP-based Membrane-type Semiconductor Lasers
نویسنده
چکیده
With an aim of ultra-low power operation, membranetype distributed-feedback (DFB) lasers consisting of wirelike active regions are realized with an InP-based high index-contrast waveguide by using benzocyclobutene (BCB) as well as direct boding on a silicon-on-insulator (SOI) substrate. Lateral current injection (LCI) type lasers on a semi-insulating (SI) InP substrate are also presented. Keywords-semiconductor laser; distributed feedback laser; BCB bonding; wafer bonding; silicon on insulator
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