Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling
نویسندگان
چکیده
We have developed a surface potential based compact model for the single-walled semiconductor CNT field effect transistor (CNT-FET) shown in Figure 1. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are shown in Figures 2-5 respectively. The model comparison is done using the numerical results of [1-4]. The compact model is developed for circuit simulation application based on graphene material physics using a 1-D approximation.
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