A Small-Signal Analysis Based Thermal Noise Modeling Method for RF SOI MOSFETs

نویسندگان

  • Xiang Wang
  • Yu Ping Huang
  • Jun Liu
  • Jie Wang
چکیده

We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-μm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) gate resistance thermal noise. The extraction method of modeling parameter utilized by Y -parameter analysis on the proposed small-signal equivalent circuit is demonstrated in this paper. Excellent agreement between simulated and measured noise data is obtained at different temperatures.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Accurate Small-Signal Modeling of FD-SOI MOSFETs

A new small-signal model for fully depleted silicon-oninsulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range ...

متن کامل

High-Frequency Small Signal AC and Noise Modeling of MOSFETs for RF IC Design

In this paper, high-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both parameter and characteristics. Good model accuracy is achieved against measurements for a 0.25 m RF CMOS technology. The HF n...

متن کامل

Output-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits

In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free c...

متن کامل

Accurate Characterization of Silicon-On-Insulator MOSFETs for the Design of Low-Voltage, Low-Power RF Integrated Circuits

The maturation of low cost Silicon-on-Insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop speci®c characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in-situ calibration, and a new powerful direct extraction method, allows reliable identi®cation of the parameter...

متن کامل

Modeling and Simulation of Substrate Noise in Mixed-Signal Circuits Applied to a Special VCO

The mixed-signal circuits with both analog and digital blocks on a single chip have wide applications in communication and RF circuits. Integrating these two blocks can cause serious problems especially in applications requiring fast digital circuits and high performance analog blocks. Fast switching in digital blocks generates a noise which can be introduced to analog circuits by the common su...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017