Effect of Grain Size and Hydrogen Passivation on the Electrical Properties of Nanocrystalline Silicon Films
نویسندگان
چکیده
The properties of mixed-phase (nanocrystalline/amorphous) silicon layers produced by reactive RF-sputtering are described. The chemical composition and nanostructure [i.e. nanocrystal (NC) size and volume fraction] of the films were studied by Rutherford backscattering spectroscopy (RBS) and micro-Raman spectroscopy, respectively. Samples with different fractions of the nanocrystalline phase and NC mean size were produced by changing the deposition parameters, without post-growth annealing. The electrical conductivity of the films, measured as function of temperature, is discussed in relation to their nanostructure.
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