Automatic kelvin probe compatible with ultrahigh vacuum

نویسندگان

  • I. D. Baikie
  • A. van Silfhout
چکیده

This article describes a new type of in situ ultrahigh-vacuum compatible kelvin probe based on a voice-coil driving mechanism. This design exhibits several advantages over conventional mechanical feed-through and (in situ) piezoelectric devices in regard to the possibility of multiple probe geometry, flexibility of probe geometry, amplitude of oscillation, and pure paranel vibration. Automatic setup and constant spacing features are achieved using a digital-to-analog converter (DA C) steered offset potential. The combination of very low driver noise pick -up and data-acquisition system (DAS) signal processing techniques results in a work function (wf) resolution, under optimal conditions, of < 0.1 meY. Due to its high surface sensitivity and compatibility with standard sample cleaning and analysis techniques this design has numerous applications in surface studies, e.g., adsorption kinetics, sample topography and homogeneity, sputter profiles, etc. For semiconductor specimens the high wi resolution makes it eminently suitable for surface photovoltage (SPV) spectroscopy.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)

Noncontact atomic force microscopy provides access to several complementary signals, such as topography, damping, and contact potential. The traditional presentation of such data sets in adjacent figures or in colour-coded pseudo-three-dimensional plots gives only a qualitative impression. We introduce two-dimensional histograms for the representation of multichannel NC-AFM data sets in a quant...

متن کامل

Graphene on Si(111)7×7.

We demonstrate that it is possible to mechanically exfoliate graphene under ultrahigh vacuum conditions on the atomically well defined surface of single crystalline silicon. The flakes are several hundred nanometers in lateral size and their optical contrast is very faint, in agreement with calculated data. Single-layer graphene is investigated by Raman mapping. The graphene and 2D peaks are sh...

متن کامل

Electrostatic field and partial Fermi level pinning at the pentacene-SiO(2) interface.

Monolayer islands of pentacene deposited on silicon substrates with thermally grown oxides were studied by electric force microscopy (EFM) and scanning Kelvin probe microscopy (SKPM) in ultrahigh vacuum (UHV) after prior 10 min exposure to atmospheric ambient. On 25-nm-thick oxides, the pentacene islands are 0.5 V higher in electrostatic potential than the silicon dioxide background because of ...

متن کامل

The role of the cantilever in Kelvin probe force microscopy measurements

The role of the cantilever in quantitative Kelvin probe force microscopy (KPFM) is rigorously analyzed. We use the boundary element method to calculate the point spread function of the measuring probe: Tip and cantilever. The calculations show that the cantilever has a very strong effect on the absolute value of the measured contact potential difference even under ultra-high vacuum conditions, ...

متن کامل

A new Stark decelerator based surface scattering instrument for studying energy transfer at the gas-surface interface.

We report on the design and characterization of a new apparatus for performing quantum-state resolved surface scattering experiments. The apparatus combines optical state-specific molecule preparation with a compact hexapole and a Stark decelerator to prepare carrier gas-free pulses of quantum-state pure CO molecules with velocities controllable between 33 and 1000 m/s with extremely narrow vel...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2001