Laser-induced damage in composites of scandium, hafnium, aluminum oxides with silicon oxide in the infrared.

نویسندگان

  • Xinghai Fu
  • Mireille Commandré
  • Laurent Gallais
  • Mathias Mende
  • Henrik Ehlers
  • Detlev Ristau
چکیده

The laser-induced damage of mixtures of Sc2O3, HfO2, Al2O3 with SiO2 has been characterized in the infrared for both nanosecond and subpicosecond pulses. Laser-induced damage thresholds (LIDTs) are reported and discussed versus band gap for different compositions. The distributions versus fluence of nanosecond damage precursor densities are extracted fitting damage probability curves. Two models are used: first, a statistical approach, i.e., direct calculation of damage precursor density from damage probability, and second a thermal model based on absorption of initiator. The results show a good agreement. The nature, shape, and size of these precursors are discussed. The critical temperature in the thermal model is dependent on the band gap energy.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High dielectric constant oxides

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...

متن کامل

Scaling of Dimensions & Gate Capacitances of MOSFET

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...

متن کامل

Evaporated HfO2/SiO2 Optical Coatings and Modifications for High-Power Laser Applications

Evaporated optical coatings fabricated from hafnium dioxide and silicon dioxide are the standard approach for high-peak-power laser components due to the high laser damage resistance of such coatings and the ability to deposit on largeaperture substrates. The tensile film stresses of such coatings may lead to failure, however, particularly in low-relative-humidity purged or vacuum use environme...

متن کامل

Laser-induced damage thresholds of bulk and coating optical materials at 1030  nm, 500  fs.

We report on extensive femtosecond laser damage threshold measurements of optical materials in both bulk and thin-film form. This study, which is based on published and new data, involved simple oxide and fluoride films, composite films made from a mixture of two dielectric materials, metallic films, and the surfaces of various bulk materials: oxides, fluorides, semiconductors, and ionic crysta...

متن کامل

16 Hafnium - based High - k Gate Dielectrics

Scaling of silicon dioxide dielectrics has once been viewed as an effective approach to enhance transistor performance in complementary metal-oxide semiconductor (C-MOS) technologies as predicted by Moore’s law [1]. Thus, in the past few decades, reduction in the thickness of silicon dioxide gate dielectrics has enabled increased numbers of transistors per chip with enhanced circuit functionali...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Applied optics

دوره 53 4  شماره 

صفحات  -

تاریخ انتشار 2014