Effectively exciting plasmonic resonance by supplemental gates for terahertz photodetection in a grating gated field- effect transistor
نویسندگان
چکیده
An alternative-grating gated AlGaN/GaN field-effect transistor (FET) is proposed by considering the slit regions to be covered by a highly doped semiconductor acting as supplemental gates. The plasmonic resonant absorption spectra are studied at THz frequencies using the FDTD method. The simulated results show that the 2DEGs, under supplemental gates, modulated by a positive voltage, can make the excitation of the plasmon modes under metallic fingers more efficient in comparison to ungated regions in common slit grating gate transistors.
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