A 2.14 GHz inverse class F Si-LDMOS power amplifier with voltage second harmonic peaking
نویسندگان
چکیده
Short Abstract—A simplified inverse class F power amplifier (PA) with a voltage second harmonic peaking and third harmonic short operating at 2.14GHz for WCDMA base station applications has been developed. The load network is based on transmission line harmonic traps and provides high impedance at the second and low impedance at the third harmonic to the PA. The PA uses a packaged Silicon LDMOS transistor and provides an output power of 13.8W and a drain efficiency of 66%. Due to the high gain of 13.4dB an excellent power added efficiency (PAE) of 64% is obtained. The 6dB back off PAE is 35%. To the author’s knowledge, the highest obtained output power and PAE for a packaged Si-LDMOS transistor based on this architecture at this frequency is presented.
منابع مشابه
A Class E Power Amplifier with Low Voltage Stress
A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...
متن کاملUsing LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications
The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its...
متن کاملA Dual Band High Efficiency Class-F GaN Power Amplifier Using a Novel Harmonic-Rejection Load Network
A class-F high efficiency GaN power amplifier (PA) for dual band operation at 2.14 GHz and 2.35 GHz is proposed. A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is described. In addition, a matching network which guarantees the high efficiency and gain of PA f...
متن کاملInverse Class-F Power Amplifier Using Slot Resonators as a Harmonic Filter
In this contribution, an inverse-class-F (F -1 ) power amplifier at 1.7 GHz using GaN device is proposed and experimentally tested. The novelty in the design is the use of a three-layers rectangular slot resonators in microstrip line’s ground plane as harmonic filter. In particular, a planar periodic structure composed by two different slot resonators is used to control 2 nd , 3 rd harmonics an...
متن کاملAnalysis and Design of High Gain, and Low Power CMOS Distributed Amplifier Utilizing a Novel Gain-cell Based on Combining Inductively Peaking and Regulated Cascode Concepts
In this study an ultra-broad band, low-power, and high-gain CMOS Distributed Amplifier (CMOS-DA) utilizing a new gain-cell based on the inductively peaking cascaded structure is presented. It is created bycascading of inductively coupled common-source (CS) stage and Regulated Cascode Configuration (RGC).The proposed three-stage DA is simulated in 0.13 μm CMOS process. It achieves flat and high ...
متن کامل