Ti/Si thin films during ultra rapid thermal annealing
نویسندگان
چکیده
WC introduce a new technique for rapidly heating (10’ “C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high-current dc electrical pulse to a conductive substrate-heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from lo3 to lo6 “C/s. The temperature of the system is measured by using the substrate heater as a thermistor and is found to be within * 5 10 “C during anneals at -10” “C/s. Phase transformations in the Ti-Si system were also observed using in siru resistivity measurements during ETA at =1O4 “C.
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