P-11: Electrical Properties and Stability of Dual-Gate Coplanar Homojunction Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor
نویسندگان
چکیده
The electrical characteristics and stabilities of dual-gate (DG) coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) are described. When the gate voltage is applied on top and bottom electrodes, the DG a-IGZO TFT showed an excellent electrical performance with the subthreshold swing of 99 mV/dec, the mobility of 15.1 cm/V·s and the on-off ratio of 10. Under positive bias temperature stress, the device threshold voltage shifts about +4.5V after 10,000 seconds, while its shifts under negative bias temperature stress are very small. The effect of TFT illumination is also discussed.
منابع مشابه
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