Parametric Optimization of Symmetric Toggle RF MEMS Switch for X-Band Applications
نویسندگان
چکیده
This paper presents the parametric optimization of Symmetric Toggle RF MEMS Switch (STS), particularly for reduction of overall dimensions and improvement in isolation and insertion loss. The variations in device topology, especially the connecting lever length demonstrates a significant change in resonance frequency and overall device dimensions. The impact of multilayer metal structures used to realize the bridge portion of the switch is also studied by changing the number and composition of metal layers. A single layer structure shows better insertion loss characteristics compared to more complex multilayer stack with added advantage of reduction in fabrication complexity. The relative change in residual stress for single and multilayer structure is also discussed. Additional compactness in size (46%) is achieved by changing the switch dielectric from SiO2 to HfO2 with dielectric constant 20.
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