Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates.
نویسندگان
چکیده
Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of molecules. While gold has been used almost exclusively so far, recent research has focused on semiconductors with the potential to revolutionize plasmonic devices. We fabricate antennas out of heavily doped Ge films epitaxially grown on Si wafers and demonstrate up to 2 orders of magnitude signal enhancement for the molecules located in the antenna hot spots compared to those located on a bare silicon substrate. Our results set a new path toward integration of plasmonic sensors with the ubiquitous CMOS platform.
منابع مشابه
Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films
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متن کاملBaldassarre, L. et al. (2016) Mid-Infrared Plasmonic Platform Based on n- Doped Ge-on-Si: Molecular Sensing with Germanium Nano-Antennas on Si. In: 41st International Conference on Infrared, Millimeter, and Terahertz Waves
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nanoantennas on Si substrates demonstrating the presence ...
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ورودعنوان ژورنال:
- Nano letters
دوره 15 11 شماره
صفحات -
تاریخ انتشار 2015