Tunneling images of germanium surface reconstructions and phase boundaries.

نویسندگان

  • Becker
  • Golovchenko
  • Swartzentruber
چکیده

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Scanning Tunneling Microscopy of the GaN(000 ) Surface

In-situ scanning tunneling microscopy studies have been performed on the GaN(000 ) surface. Four dominant reconstructions have been observed: 1×1, 3×3, 6×6, and c(6×12). The 1×1 structure is formed by annealing the as-grown GaN surface to desorb excess Ga atoms. The higher order reconstructions are formed by depositing sub-monolayer quantities of Ga atoms onto this 1×1 surface. STM images showi...

متن کامل

Coexistence of strongly buckled germanene phases on Al(111)

We report a study of structural and electronic properties of a germanium layer on Al(111) using scanning tunneling microscopy (STM), low energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a germanium layer can be formed at a relatively high substrate temperature showing either (3×3) or (√7×√7)R±19.1° reconstructions. First-principles calculatio...

متن کامل

Wurtzite GaN Surface Structures Studied by Scanning Tunneling Microscopy and Reflection High Energy Electron Diffraction

We report studies of the surface reconstructions for both the Ga-face and the N-face of wurtzite GaN films grown using molecular beam epitaxy. Nface reconstructions are primarily adatom-on-adlayer structures which can be formed by room temperature sub-monolayer Ga deposition. These structures undergo reversible order-disorder phase transitions to 1×1 in the temperature range of 200–300 C. Ga-fa...

متن کامل

Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition.

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize u...

متن کامل

Reconstructions of the InP„111...A surface

Indium phosphide was deposited on InP(111)A substrates by metalorganic vapor-phase epitaxy. Then, the surface was characterized by scanning tunneling microscopy, low-energy electron diffraction, and x-ray photoelectron spectroscopy. Two reconstructions were observed: the (232) and the ()3))R30° with phosphorus coverages of 0.25 and 1.0060.05 ML ~monolayers!, respectively. The (232) was found to...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 54 25  شماره 

صفحات  -

تاریخ انتشار 1985