Codoping Method for Solutions of Doping Problems in Wide-Band-Gap Semiconductors

We propose a codoping method of using acceptors and donors simultaneously as a solution to the crucial doping problem, or unipolarity, of wide-band-gap semiconductors which exhibit an asymmetry in their ability to be doped as n-type or p-type. The deliberate codoping of donors is essential for the enhancement of acceptor incorporation, decrease of the binding energy of the acceptor impurity and stabilization of the ionic charge distributions in p-type highly doped semiconductors. The donor is not the p-type killer but a good by-player that activates acceptors, i.e., reactive codopant. Confirmation of the applicability of the codoping method to produce low-resistivity p-type GaN, ZnO, and ZnS was sought experimentally.