Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures

نویسندگان

  • A. Redondo-Cubero
  • K. Lorenz
  • R. Gago
  • N. Franco
  • S. Fernández-Garrido
  • P. J. M. Smulders
  • E. Muñoz
  • E. Calleja
  • I. M. Watson
  • E. Alves
چکیده

determination in GaN-based heterostructures A. Redondo-Cubero, K. Lorenz, R. Gago, N. Franco, S. Fernández-Garrido, P. J. M. Smulders, E. Muñoz, E. Calleja, I. M. Watson, and E. Alves Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, E-28040 Madrid, Spain Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain Instituto Tecnológico e Nuclear, 2686-953 Sacavém, Portugal Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid, Spain Materials Science Centre, Groningen University, 9747 AG Groningen, The Netherlands Institute of Photonics, SUPA, University of Strathclyde, G4 0NW Glasgow, United Kingdom

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تاریخ انتشار 2009