Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures
نویسندگان
چکیده
determination in GaN-based heterostructures A. Redondo-Cubero, K. Lorenz, R. Gago, N. Franco, S. Fernández-Garrido, P. J. M. Smulders, E. Muñoz, E. Calleja, I. M. Watson, and E. Alves Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, E-28040 Madrid, Spain Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain Instituto Tecnológico e Nuclear, 2686-953 Sacavém, Portugal Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid, Spain Materials Science Centre, Groningen University, 9747 AG Groningen, The Netherlands Institute of Photonics, SUPA, University of Strathclyde, G4 0NW Glasgow, United Kingdom
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Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state.
Monte Carlo simulations of anomalous ion channeling in near-lattice-matched AlInN/GaN bilayers allow an accurate determination of the strain state of AlInN by Rutherford backscattering or channeling. Although these strain estimates agree well with x-ray diffraction (XRD) results, XRD composition estimates are shown to have limited accuracy, due to a possible deviation from Vegard's law, which w...
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