Analysis of Algan/gan Based Hemt Device for Mmic Design

In this paper AlGaN/GaN heterostructure device analysis carried out which are capable for high power and frequency with performances far superior to those offered by the mainstream silicon technology and other advanced semiconductor technologies. AlGaN/GaN HEMT primarily driven by microwave wireless communication applications need. The last few years have witnessed major effort in the development of AlGaN/GaN HEMTs. This paper analysis the latest progresses in this technology, including alternative approaches and HEMT device characteristics. AlGaN/GaN HEMTs promise for high power, temperature and frequency than their AlGaAs/GaAs. To accomplish this goal, we present a comparative analysis of different modeling techniques and show that the differences reflect the physical and technology differences of the tested microwave transistors. Many successful techniques have been described, those are developed in the last decades for extracting the small signal equivalent circuit for GaAs & GaN HEMT from scattering parameter measurements, small signal modeling is still object of intense research.