A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure
نویسندگان
چکیده
منابع مشابه
Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory
Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platinum (Pt) were used as top electrodes in the STN-based RRAM to probe the switching behavior. The bipolar resistive switching behavior of the set and ...
متن کاملAbnormal coexistence of unipolar, bipolar, and threshold resistive switching in an Al/NiO/ITO structure
This paper reports an abnormal coexistence of different resistive switching behaviors including unipolar (URS), bipolar (BRS), and threshold switching (TRS) in an Al/NiO/indium tin oxide (ITO) structure fabricated by chemical solution deposition. The switching behaviors have been strongly dependent on compliance current (CC) and switching processes. It shows reproducible URS and BRS after elect...
متن کاملPoint contact resistive switching memory based on self-formed interface of Al/ITO
Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of...
متن کاملInvestigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film
Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I–V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction...
متن کاملDual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions
The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO subs...
متن کامل