Electron-Hole Generation and Recombination Rates for Coulomb Scattering in Graphene

نویسنده

  • Farhan Rana
چکیده

We calculate electron-hole generation and recombination rates for Coulomb scattering (Auger recombination and impact ionization) in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum conservation requirements restrict the phase space for Coulomb scattering so that electron-hole recombination times can be much longer than 1 ps for electron-hole densities smaller than 1012 cm−2.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electron-Hole Recombination Rates for Auger Scattering in Graphene

We calculate electron-hole recombination rates for Auger scattering in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum conservation requirements restrict the phase space for Auger processes so that electron-hole recombination times can be much longer than 1 ps for electron-hole densities smaller than 1012 cm−2.

متن کامل

Ultrafast carrier recombination and generation rates for plasmon emission and absorption in graphene

Electron-hole generation and recombination rates for plasmon emission and absorption in graphene are presented. The recombination times of carriers due to plasmon emission are found to be in the tens of femtoseconds to hundreds of picoseconds range. The recombination times depend sensitively on the carrier energy, carrier density, temperature, and plasmon dispersion. Carriers near the Dirac poi...

متن کامل

Title of dissertation : THEORY OF GRAPHENE TRANSPORT PROPERTIES

Title of dissertation: THEORY OF GRAPHENE TRANSPORT PROPERTIES Qiuzi Li, Doctor of Philosophy, 2013 Dissertation directed by: Professor Sankar Das Sarma Department of Physics Graphene is of great fundamental interest and has potential applications in disruptive novel technologies. In order to study the novel phenomena in graphene, it is essential to understand its electron transport properties ...

متن کامل

Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

Raman spectroscopy is a fast and nondestructive means to characterize graphene samples. In particular, the Raman spectra are strongly affected by doping. While the resulting change in position and width of the G peak can be explained by the nonadiabatic Kohn anomaly at , the significant doping dependence of the 2D peak intensity has not been understood yet. Here we show that this is due to a co...

متن کامل

Conductivity of defectless graphene

Conductivity of graphene, a flat monolayer of carbon atoms, as a function of doping charge shows a pronounced minimum at the neutrality, compensation point. The theory predicts for this point a universal conductivity, whereas the experimental conductivity exceeds this prediction by few times. This discrepancy persists for long time now and may justify an additional study of zero gap semiconduct...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2007