Analysis of Charge-Coupled Devices Image Sensors with an Overflow Drain Structure
نویسندگان
چکیده
When CCD image sensor is exposed to very intense light , an excess charge is generated in photodiode. This excess charge may leak into neighboring cells. This phenomenon is called Blooming. To stop blooming phenomenon an Overflow Drain structure is adapted to suppress this excess charge. In this paper CCD Image sensor with a Vertical Overflow Drain (VOD) structure is investigated in one and two dimensions. In one-dimensional investigation the blooming mechanism under the Photodiode is studied. The lower limit of the PD potential is adjusted using an optimization procedure to suppress this blooming. The CCD image sensor with a Vertical Overflow Drain (VOD) structure is also investigated in Two-Dimensions. The potential distribution in two dimensions is calculated by using Laster method. Blooming mechanism is investigated and compared to the one dimensional calculation. Also, optimization procedure is employed in order to control the blooming mechanism. KeywordsCharge-Coupled Device, Vertical Overflow Drain, Blooming, etc.
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