Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatment
نویسندگان
چکیده
We report a treatment that enhances and stabilizes the photoluminescence (PL) from porous Si films. Films prepared by anodization in a 50% HF/ethanol solution were annealed at 450 “C! in vacuum, exposed to air, and then exposed to a remote-hydrogen plasma. Infrared absorption spectroscopy revealed that the concentration of oxygen, rather than hydrogen, was increased by the processing steps, and that silicon dihydride species had been eliminated from the surface. The PL from a treated film was initially -30 times more intense than from the as-etched films. The PL intensity increased with illumination time in air until a steady-state intensity was reached.
منابع مشابه
Control capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers
Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
متن کاملControl capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers
Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
متن کاملEnhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities
With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand, HfO2 contributes to the light emission with the transitions of the defect levels for oxygen vacancy. On the other hand, the special filling-into-microcavities structure of HfO2 leads to the presence of ferroelectricity, which greatly enh...
متن کاملبررسی خواص پراکندگی سیلیکان متخلخل
Porous silicon (PS) layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet. In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the prop...
متن کاملRadiative and nonradiative relaxation phenomena in hydrogen- and oxygen-terminated porous silicon
Using time-resolved photoluminescence spectroscopy over a wide range of temperatures, we were able to probe both radiative and nonradiative relaxation processes in luminescent porous silicon. By comparing the photoluminescence decay times from freshly prepared and oxidized porous silicon, we show that radiative processes should be linked with quantum confinement in small Si nanocrystallites and...
متن کامل