Transport suppression in heterostructures driven by an ac gate voltage

نویسندگان

  • Miguel Rey
  • Michael Strass
  • Fernando Sols
چکیده

We explore the possibility of inducing in heterostructures driven by an ac gate voltage the coherent current suppression recently found for nanoscale conductors in oscillating fields. The destruction of current is fairly independent of the transport voltage, but can be controlled by the driving amplitude and frequency. Within a tight-binding approximation, we obtain analytical results for the average current in the presence of driving. These results are compared against an exact numerical treatment based on a transfer-matrix approach.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Current and noise suppression in ac-driven coherent transport

We investigate the possibility to manipulate for the transport through heterostructures the dc current and its noise properties by an ac gate voltage. For a computation of the noise strength, we map the system to a tight-binding model for which noise suppression by ac fields has been predicted recently. The quality of this description is tested by comparing the transmission of the tight-binding...

متن کامل

Shot noise in a harmonically driven ballistic graphene transistor

We study time-dependent electron transport and quantum noise in a ballistic graphene field effect transistor driven by an ac gate potential. The nonlinear response to the ac signal is computed through Floquet theory for scattering states and Landauer-Büttiker theory for charge current and its fluctuations. Photon-assisted excitation of a quasibound state in the top-gate barrier leads to resonan...

متن کامل

Representation of a nanoscale heterostructure dual material gate JL-FET with NDR characteristics

In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...

متن کامل

Design of Gate-Driven Quasi Floating Bulk OTA-Based Gm–C Filter for PLL Applications

The advancement in the integrated circuit design has developed the demand for low voltage portable analog devices in the market. This demand has increased the requirement of the low-power RF transceiver. A low-power phase lock loop (PLL) is always desirable to fulfill the need for a low power RF transceiver. This paper deals with the designing of the low power transconductance- capacitance (Gm-...

متن کامل

Thermionic emission and negative dI/dV in photoactive graphene heterostructures.

Transport in photoactive graphene heterostructures, originating from the dynamics of photogenerated hot carriers, is governed by the processes of thermionic emission, electron-lattice thermal imbalance, and cooling. These processes give rise to interesting photoresponse effects, in particular negative differential resistance (NDR) arising in the hot-carrier regime. The NDR effect stems from a s...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004