Measurement of carrier generation lifetime in SOI devices
نویسندگان
چکیده
This paper presents a new, simple method of measuring the generation lifetime in SOI (silicon-on-insulator) MOSFETS. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across ®nished SIMOX (separation by implantated oxygen) wafers, BESOI (bonded and etchedback SOI) wafers, and UNIBOND wafers. BESOI material evaluated in this study had about seven times longer eective generation lifetime than SIMOX material and the three types of the SOI wafers are shown to have a lifetime variation of 220% across four inch wafers. The generation lifetime was also found to depend on the device fabrication process. # 1998 Elsevier Science Ltd. All rights reserved.
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