Design and Fabrication of 50-nm Thin-Body p-MOSFETs With a SiGe Heterostructure Channel

Thin-body p-channel MOS transistors with a SiGe/Si heterostructure channel were fabricated on silicon-on-insulator (SOI) substrates. A novel lateral solid-phase epitaxy process was employed to form the thin-body for the suppression of shortchannel effects. A selective silicon implant that breaks up the interfacial oxide was shown to facilitate unilateral crystallization to form a single crystalline channel. Negligible threshold voltage roll-off was observed down to a gate length of 50 nm. The incorporation of Si0 7Ge0 3 in the channel resulted in a 70% enhancement in the drive current. This is the smallest SiGe heterostructurechannel MOS transistor reported to date. This is also the first demonstration of a thin-body MOS transistor incorporating a SiGe heterostructure channel.