δ-doped ldd hmesfet
نویسندگان
چکیده
in this paper we propose and simulate a new heterostructure mesfet, called δ-doped ldd hmesfet. to improve carrier velocity in vicinity of the source in channel of gaas mesfet, one can replace source with alxga 1-x as. by increasing al content, discontinuity of hetero-interface could be increased. therefore, the velocity increases in the low field. however, increasing al mole fraction in excess of some value forces the current to reduce, due to dx centers. to avoid this reduction, we suggest taking the advantage of ?-doped the source-channel hetero-interface. this increase discontinuity of hetero-interface, which is equivalent to increasing al content. in this paper, we simulate the proposed transistor structure and compare it with the one proposed in [1], ignoring dx centers. in this comparison, we show that the average electron velocity in both transistors is identical.
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در این مقاله ساختار جدید δ-doped ldd hmesfet را معرفی و شبیه سازی می کنیم. یکی از راههای افزایش سرعت حامل در کانال در مجاورت سورس ترانزیستور مسفت، استفاده از ساختار نا همگون hmesfet است؛ یعنی از سورس alxga1-x as در مجاورت کانال gaasاستفاده می شود. با افزایش x (در صد مولی al ) می توان ناپیوستگی گاف نوار (δeg) در فصل مشترک سورس - کانال را افزایش داد و سرعت حامل را در ناحیه میدان ضعیف زیاد کرد. ام...
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عنوان ژورنال:
the modares journal of electrical engineeringناشر: tarbiat modares university
ISSN 2228-527 X
دوره 3
شماره 1 2003
کلمات کلیدی
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