Wide Band Gap Semiconductor Devices for Power Electronics
نویسندگان
چکیده
منابع مشابه
Wide Band Gap Semiconductor Devices for Power Electronics
It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative chang...
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The basic requirement for a imaging low-light level system (one capable of single photon counting) is that the device has low dark current. Photocathode based devices have the advantage over solid state devices in this regard as the dark current is inherently low. A further requirement for UV detectors is the necessity to suppress the sensitivity in the red, and wide-band gap semi-conductors ll...
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Semiconductor devices continue to play a major role in enabling the realization of new portable products, which at present is one of the fastest growing segments in the electronics industry. To address key portable system requirements such as lighter weight, reduced size and heat dissipation, semiconductor devices associated with power management functions have become increasingly application-s...
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nanowires Chul-Ho Lee, Gyu-Chul Yi, Yuri M. Zuev, and Philip Kim National Creative Research Initiative Center for Semiconductor Nanorods and Department of Materials Science and Engineering, POSTECH, Pohang, Gyeongbuk 790-784, Republic of Korea Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea Department of Applied Physics and Applied Mathematics an...
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ژورنال
عنوان ژورنال: Automatika
سال: 2012
ISSN: 0005-1144,1848-3380
DOI: 10.7305/automatika.53-2.177