VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter
نویسندگان
چکیده
منابع مشابه
Site-controlled VLS growth of planar nanowires: yield and mechanism.
The recently emerged selective lateral epitaxy of semiconductor planar nanowires (NWs) via the vapor-liquid-solid (VLS) mechanism has redefined the long-standing symbolic image of VLS NW growth. The in-plane geometry and self-aligned nature make these planar NWs completely compatible with large scale manufacturing of NW-based integrated nanoelectronics. Here, we report on the realization of per...
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We report the growth of high density silicon Oxide (SiOx) nanowires at an elevated temperature. The nanowires density is enhanced by inserting a thin layer of chromium metal in gold/Si catalyst system. The SiOx nanowires were grown with gold/chromium catalysts stack layer on the Si substrate at different temperatures ranging from 1050oC to 1150oC. Under the catalysis reaction of the gold/chromi...
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Although the various effects of strain on silicon are subject of intensive research since the 1950s the physical background of anomalous piezoresistive effects in Si nanowires (NWs) is still under debate. Recent investigations concur in that due to the high surface-to-volume ratio extrinsic surface related effects superimpose the intrinsic piezoresistive properties of nanostructures. To clarify...
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We report here a systematic synthesis and characterization of aligned R-Fe2O3 (hematite), -Fe2O3, and Fe3O4 (magnetite) nanorods, nanobelts, and nanowires on alumina substrates using a pulsed laser deposition (PLD) method. The presence of spherical gold catalyst particles at the tips of the nanostructures indicates selective growth via the vapor-liquid-solid (VLS) mechanism. Through a series of...
متن کاملSite - Controlled VLS Growth of Planar Nanowires : Yield and 2 Mechanism
7 ABSTRACT: The recently emerged selective lateral epitaxy 8 of semiconductor planar nanowires (NWs) via the vapor− 9 liquid−solid (VLS) mechanism has redefined the long10 standing symbolic image of VLS NW growthvertical NWs 11 extending out of the substrate. The in-plane geometry and self12 aligned nature make these planar NWs completely compatible 13 with large scale manufacturing of NW-base...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2011
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3574398