منابع مشابه
Millimeter-Wave GaN HEMT for Power Amplifier Applications
Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73V. A cut-off frequency fT of 113GHz and maximum oscillation frequency fmax of 230GHz were achieved. The output powe...
متن کاملAdvanced Hemt Mmic Circuits for Millimeter- and Submillimeter-wave Power Sources
This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and communications circuits. Recently, we have developed several HEMT MMIC circuits using HRL Laboratories' 0.1 um InP HEMT technology with unprecedented high frequency performance and output power. Our results include an 80 GHz band...
متن کاملAdvanced Hemt Mmic Circuits for Sources Millimeter- and Submillimeter-wave Power
This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and communications circuits. Recently, we have developed several HEMT MMIC circuits using HRL Laboratories’ 0.1 um InP HEMT technology with unprecedented high frequency performance and output power. Our results include an 80 GHz band...
متن کاملManufacturable AlSb/InAs HEMT Technology for Ultra-Low Power Millimeter-Wave Integrated Circuits
High electron mobility transistors with InAs channels and sub 0.1m metal gates, have demonstrated a 100% improvement in low-power, high-speed figure of merits over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs. AlSb/InAs MHEMTs exhibit transconductances as high as 1.3 S/mm at drain biases as low as 0.3 V, while maintaining fT and fmax results greater than 220 GHz and 270 GHz, resp...
متن کاملGallium Phosphide IMPATT Sources for Millimeter-Wave Applications
The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to ope...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Electronics, Information and Systems
سال: 1996
ISSN: 0385-4221,1348-8155
DOI: 10.1541/ieejeiss1987.116.5_512