Vertically Mounted InGaN-on-Sapphire Light-Emitting Diodes

Enhancement of InGaN-Based Light Emitting Diodes Performance Grown on Cone-Shaped Pattern Sapphire Substrates

To enhance light extraction effciency, high-quality InGaN-based light emitting diodes (LED) was grown on cone-shaped patterned sapphire (CPSS) by using metal organic chemical vapor deposition (MOCVD). From the transmission electron microscopy (TEM) observation, the CPSS was confirmed to be an efficient way to reduce the threading dislocation density in the GaN epilayer. A sharp and high intensi...

Fabrication of InGaN-Based Vertical Light Emitting Diodes Using Electroplating

Group III–nitride semiconductors and their ternary solid solutions are very promising as the candidates for both short wavelength optoelectronics and power electronic devices (Nakamura et al. 1997; Nakamura et al. 1995; Lee, et al. 2010; Youn, et al. 2004). The AlGaN/GaN heterostructure field effect transistors (HFETs) have a great potential for future high-frequency and high-power applications...

A hole accelerator for InGaN/GaN light-emitting diodes

InGaN/GaN quantum well interconnected microdisk light emitting diodes

Evaluation of InGaN/GaN light-emitting diodes of circular geometry.

Blue GaN light emitting diodes (LEDs) in the shape of cuboids and circular disks have been fabricated by laser micromachining. The proposed circular geometry serves to enhance overall light extraction on a macro-scale and to improve uniformity of the emission pattern due to the rotational symmetry of the chip. Analysis of the chip shaping effect is carried out by ray-tracing simulations and fur...