Versatile van der Waals heterostructures of ?-GeSe with h-BN/graphene/MoS<sub>2</sub>
نویسندگان
چکیده
Recent discovery of a novel hexagonal phase GeSe (Gamma-GeSe) has triggered great interests in nanoelectronics applications owing to its electrical conductivity bulk even higher than graphite while monolayer is semiconductor. For potential applications, construction functional two-dimensional (2D) contacts indispensable. Herein, via first-principles calculations, we propose the design van der Waals heterostructures (vdWHs) Gamma-GeSe contacting respectively with graphene, 2D h-BN and MoS2, as representatives metallic, insulator, semiconductor partners. Our work shows that or graphene layer donates electrons layer, resulting n doping Gamma-GeSe, MoS2 accepts from leading p latter. The Gamma-GeSe/BN heterostructure type-I band alignment large offsets, indicating BN can be used an effective passivating protect environmental disturbance maintaining major electronic optical characteristics. Gamma-GeSe/graphene heterostructure, it prone have very low-Schottky barrier down tens meV, easily overcome by thermal excitation, which tunable strain external electric field. Gamma-GeSe/MoS2 vdWH forms Z-scheme interface, beneficial for carriers splitting photon utilization. indicates well passivated BN, form intimate contact high charge injection efficiency efficient redox reactions.
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ژورنال
عنوان ژورنال: Journal of Materials Chemistry C
سال: 2022
ISSN: ['2050-7526', '2050-7534']
DOI: https://doi.org/10.1039/d2tc02105f