Variable range hopping conductivity in molecular beam epitaxial InSb

Abstract A variable range hopping (VRH) transport mechanism can be induced in molecular beam epitaxial, n-type doped InSb wafers with focussed Ga + ion damage. This technique allows areas of wafer to selectively damaged and then subsequently processed into gated metal–insulator–semiconductor (MIS) devices where a disordered, two-dimensional (2D) device established. At high levels damage (dose >10 16 ions cm −2 ) amorphous crystalline behavior results activated conductivity characteristic three-dimensional system VRH below 150 K. lower doses (10 14 –10 thermally is at ∼0.9 K, Mott phonon-assisted VRH. 1 K the either conduct >∼( e 2 / h fundamental charge Planck’s constant, or are depending on dose level. The lightly show weak antilocalization signals 2D electronic system. As increases, measured phase coherence length reduces from ∼500 nm ∼100 nm. provides region phase-coherent processes studied regime dimensionality controlled by gate voltage an MIS-device.