Variability and power enhancement of current controlled resistive switching devices

In this work, the unipolar resistive switching behaviour of Ni/HfO2/Si(n+) devices is studied. The structures are characterized using both current and voltage sweeps, with device resistance its cycle-to-cycle variability being analysed in each case. Experimental measurements indicate a clear improvement on states stability when sweeps to induce set reset processes. Moreover, it has been found that these transitions more efficient than as seen analysing power consumption. same results obtained for Ni top electrode bilayer or pentalayer HfO2/Al2O3 dielectric. Finally, kinetic Monte Carlo compact modelling simulation studies performed shed light experimental results.