Valley light-emitting transistor
نویسندگان
چکیده
منابع مشابه
Organic light-emitting transistor technology
The organic light-emitting transistor (OLET) is an emerging optoelectronic device having the structure of a thin-film transistor and the capability of light generation [1]. Bright/multicolor OLETs may allow electroluminescent display fabrication with simpler driving circuits. Furthermore, the most advanced OLETs encompass a huge technological potential for the realization of intense nanoscale l...
متن کاملLight-emitting polymer space-charge-limited transistor
Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly 3-hexylthiophene . Yellow poly para-phenylene vinylene derivative is used as the yell...
متن کاملLight emitting charge injection transistor with p-type collector
We report the first realization of a charge injection transistor with a complementary collector. The device is implemented using InGaAs/InAlAs/InGaAs heterostructure material grown by molecular beam epitaxy. Real space transfer of hot electrons into the p-type collector leads to a luminescence signal arising from the recombination of the injected electrons with holes in the collector active reg...
متن کاملLead iodide perovskite light-emitting field-effect transistor
Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated b...
متن کاملDegradation of a Light Emitting Silicon Junction of a Bipolar Transistor
The variations of the current-voltage characteristics of a light emitting silicon junction of a bipolar transistor is monitored for the first time along an experiment performed at high constant reverse current. The evolutions of the parameters show the effects of degradation processes which are correlated with induced high injection effects and the changes in the avalanche generated light emiss...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: NPG Asia Materials
سال: 2014
ISSN: 1884-4049,1884-4057
DOI: 10.1038/am.2014.69