Valence band energy spectrum of HgTe quantum wells with an inverted band structure
نویسندگان
چکیده
منابع مشابه
Edge States in p-n Junctions in Inverted Band HgTe Quantum Wells
We investigate current noise of lateral p-n junctions, electrostatically defined in 14 nm–wide HgTe-based quantum wells (QWs) with inverted band structure. Consistent with previous experiments on 8-10 nm QWs, the p-n junctions resistances are close to h/2e, indicating the edge states contribution to transport. Taking into account contacts heating, we find that the observed shot noise is suppres...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2017
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.96.035310