Vacuum refining of silicon at ultra-high temperatures

Silicon Bulk Mobility at High Ambient Temperatures

One of the goals of the PARASITICS project was the evaluation of decisive physical models in the high temperature range (300 K – 700 K) by comparison between simulation and electrical measurements of suitable test structures. Various van der Pauw devices were examined to test the microscopic-based mobility model of Schenk [1]. In order to make the comparison complete, calculated Hall factors as...

Ultra-high-Q phononic resonators on-chip at cryogenic temperatures

Long-lived, high frequency phonons are valuable for applications ranging from optomechanics to emerging quantum systems. For scientific as well as technological impact, we seek high-performance oscillators that offer a path towards chip-scale integration. Confocal bulk acoustic wave resonators have demonstrated an immense potential to support long-lived phonon modes in crystalline media at cryo...

Probing charge transport at the single-molecule level on silicon by using cryogenic ultra-high vacuum scanning tunneling microscopy.

A cryogenic variable-temperature ultra-high vacuum scanning tunneling microscope is used for measuring the electrical properties of isolated cyclopentene molecules adsorbed to the degenerately p-type Si(100)-2x1 surface at a temperature of 80 K. Current-voltage curves taken under these conditions show negative differential resistance at positive sample bias, in agreement with previous observati...

Rolling Contact Fatigue in Ultra High Vacuum

Silicon optomechanical crystal resonator at millikelvin temperatures

Seán M. Meenehan,1 Justin D. Cohen,1 Simon Gröblacher,1,2 Jeff T. Hill,1 Amir H. Safavi-Naeini,1 Markus Aspelmeyer,2 and Oskar Painter1,* 1Institute for Quantum Information and Matter and Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2Vienna Center for Quantum Science and Technology (VCQ), Faculty of Physics, University...