Vacuum Gauge from Ultrathin MoS2 Transistor

Ferromagnetism in ultrathin MoS2 nanosheets: from amorphous to crystalline

Two-dimensional materials have various applications in the next generation nanodevices because of their easy fabrication and particular properties. In this work, we studied the effects of crystalline order on the magnetic properties of ultrathin MoS2 nanosheets. Results indicate that all the fabricated samples show clear room temperature ferromagnetism. The amorphous sample has the larger satur...

Ultrathin silicon-on-insulator vertical tunneling transistor

We have fabricated silicon-on-insulator ~SOI! transistors with an ultrathin Si channel of ;5 nm, tunneling gate oxide of ;1 nm, and 100 nm gate length. In addition to good transistor characteristics, these same devices exhibit additional functionality at low temperature. The drain current ID exhibits steps near the turn-on threshold voltage as a function of the backgate VBG bias on the substrat...

Vacuum Gauge to Vacuum Pump Valve

Third-harmonic generation in ultrathin films of MoS2.

We observe optical third-harmonic generation in atomically thin films of MoS2 and deduce effective third-order nonlinear susceptibilities on the order of 10(-19) m(2)/V(2), which is comparable to that of commonly used semiconductors under resonant conditions. By measuring the susceptibility as a function of light wavelength, we find significant enhancements of the susceptibility by excitonic re...

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

Ultrathin molybdenum disulphide (MoS2) has emerged as an interesting layered semiconductor because of its finite energy bandgap and the absence of dangling bonds. However, metals deposited on the semiconducting 2H phase usually form high-resistance (0.7 kΩ μm-10 kΩ μm) contacts, leading to Schottky-limited transport. In this study, we demonstrate that the metallic 1T phase of MoS2 can be locall...