Vacancy-related defects in n -type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Silicon samples of n-type have been implanted at room temperature with 5.6-MeV Si ions to a dose of 2310 cm and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V2) and vacancy-oxygen ~VO! centers were studied in detail using deep-level transient spectroscopy. The decrease of V2 cent...

Impurity–vacancy defects in implanted float-zone and Czochralski-Si

w The dual implantation method developed for defect engineering O.W. Holland, L. Xie, B. Nelson, D.S. Zhou, J. Ž . x q Electron. Mater. 25 1996 99 uses an amorphizing implant in conjunction with high energy Si -ion implantation to inject vacancies. Following annealing of the implanted samples for 20 min at 6008C and at 8008C, the amorphous layer Ž . recrystallizes by solid-phase epitaxial growt...

prevalence of atopic dermatitis in children with type 1 diabetes mellitus in southeastern of iran (kerman province): a case-control study

چکیده ندارد.

Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions

Identification of Vacancy-Impurity Complexes in Highly n-Type Si

We show that the detailed atomic structure of vacancy-impurity complexes in Si can be experimentally determined by combining positron lifetime and electron momentum distribution measurements. The vacancies complexed with a single impurity, V -P and V -As, are identified in electron irradiated Si. The formation of native vacancy defects is observed in highly As-doped Si at the doping level of 10...