Utilizing complex oxide substrates to control carrier concentration in large-area monolayer MoS<sub>2</sub> films
نویسندگان
چکیده
Bandgap engineering is central to the design of heterojunction devices. For heterojunctions involving monolayer-thick materials like MoS2, carrier concentration atomically thin film can vary significantly depending on amount charge transfer between MoS2 and substrate. This makes substrates with a range neutrality levels—as case for complex oxide substrates—a powerful addition electrostatic gating or chemical doping control overlying layers. We demonstrate this approach by growing monolayer perovskite (SrTiO3 LaAlO3), spinel (MgAl2O4), SiO2 multi-inch uniformity. The as-grown films these exhibit controlled, reproducible, uniform ranging from (1–4) ×1013 cm?2, substrate employed. observed concentrations are further confirmed our density-functional theory calculations based ab initio mismatched interface (MINT). relevant large-scale heterostructures in which it desired precisely applications.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2021
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0038383