Use of anti-solvent to enhance thermoelectric response of hybrid halide perovskite thin films

Abstract Hybrid halide perovskite research has recently been focused on thermoelectric energy harvesting due to the cost-effectiveness of fabrication approach and ultra-low thermal conductivity. To achieve high performance, tuning electrical conductivity is a key parameter that influenced by grain boundary scattering charge carrier density. The process allows these parameters. We report use anti-solvent enhance performance lead-free hybrid (CH 3 NH SnI ) thin films. Thin films with show higher connectivity in grains Sn +4 oxidation states which result enhancement value were prepared cost-effective wet process. Structural chemical characterizations performed using X-ray diffraction, scanning electron microscopy, photoelectron spectroscopy. values Seebeck coefficient measured near room temperature. A power factor (1.55 ? W m ?1 K ?2 at 320 K) was achieved for treated anti-solvent.