Use of Anionic Surfactant Sodium Lauryl Ether Sulfate as a Capping Agent in Metal-Chalcogenide PbS Thin Film Production

In this paper, nanostructured semiconductor PbS metal-chalcogenide thin films were fabricated by the chemical bath deposition method in a surface active agent environment. The structural, morphological, and optical properties of characterized X-ray diffraction, scanning electron microscopy, probe microscope ultraviolet-visible spectroscopy analyses. These analyses reveal that surfactant sodium lauryl ether sulphate plays key role modifying roughness films. average decreased from 87.9 to 42.8 nm after adding sulfate solutions. With increasing content, band gaps increased 2.10 2.52 eV. Additionally, transmittance value 3% added sample approximately 37% compared pure sample.