Universal three-way few-electron switch using silicon single-electron transistors
نویسندگان
چکیده
منابع مشابه
Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors.
Single nanometre scale quantum dots (QDs) have significant potential for many 'beyond CMOS' nanoelectronics and quantum computation applications. The fabrication and measurement of few nanometre silicon point-contact QD single-electron transistors are reported, which both operate at room temperature (RT) and are fabricated using standard processes. By combining thin silicon-on-insulator wafers,...
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چکیده ندارد.
15 صفحه اولAn Analytic Model for Kink Effect in I-V Characteristics of Single Electron Transistors
In this paper, we have investigated the effects of asymmetry in the source and drain capacitance of metallic island single electron transistors. By comparing the source and drain Fermi levels, in the ground and source referenced biasing configurations, with the island’s discrete charging energy levels for various gate voltages, we have derived a set of closed form equations for the device thres...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2004
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1772526