Unified kinetic model of dopant segregation during vapor-phase growth
نویسندگان
چکیده
منابع مشابه
Model for Dopant and Impurity Segregation During Vapor Phase Growth
We propose a new kinetic model for surface segregation during vapor phase growth that takes into account multiple mechanisms for segregation, including mechanisms for inter-layer exchange and surface diffusion. The resulting behavior of the segregation length shows temperature and velocity dependence, both of which have been observed in experiments. We compare our analytic model to experimental...
متن کاملKinetic Modeling of Dopant and Impurity Surface Segregation during Vapor Phase Growth: Multiple Mechanism Approach
We propose a new kinetic model for surface segregation during vapor phase growth that accounts for multiple segregation mechanisms, including mechanisms for terrace mediated exchange and step edge mediated exchange. The major result of the model is an analytic expression for the experimentally measured segregation length and profile broadening that can be readily calculated without the need for...
متن کاملVapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition
Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to saturate at about 0.8 and 1.0 monolayer of Si, respectively. Therefore, these processes are self-limited in both cases. When a Si cap layer is grown on the P-covered Si(001), high P conce...
متن کاملA Kinetic Model for Vapor-liquid Flows
The evaporation of a liquid slab into vacuum is studied by numerical solutions of the Enskog-Vlasov equation for a fluid of spherical molecules interacting by Sutherland potential. The main aim of this work is to obtain the structure of the vapor-liquid interface in non-equilibrium conditions as well as the distribution function of evaporating molecules. The results show that the distribution f...
متن کاملDopant segregation in polycrystalline monolayer graphene.
Heterogeneity in dopant concentration has long been important to the electronic properties in chemically doped materials. In this work, we experimentally demonstrate that during the chemical vapor deposition process, in contrast to three-dimensional polycrystals, the substitutional nitrogen atoms avoid crystal grain boundaries and edges over micron length scales while distributing uniformly in ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2005
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.72.195419