Ultraviolet photoelectrochemical photodetector based on GaN/Cu₂O core–shell nanowire p–n heterojunctions

An efficient, self-powered ultraviolet photoelectrochemical photodetector based on n-GaN/p-Cu 2 O core–shell nanowire p–n heterojunctions is demonstrated. The photocurrent under solar light 2–3 times larger than that for GaN nanowires. photocurrents the and fraction are comparable, 100 µA/cm density. broad visible part about 3% of light. responsivity specific detectivity reach 961.5 µA/W 5.35 × 10 9 Jones light, respectively. rise/fall 42/65 ms. This understood by efficient photocarrier separation, hole collection, transport in near-surface GaN/Cu heterojunction.