Ultrathin Sub-5-nm Hf??<i>?</i>Zr<i>?</i>O? for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate

This study investigates a device’s ability to boost its on-state current and subthreshold behavior using ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf 1-x Zr x O2 (HZO). A conventional (FET) pure hafnium (HfO xmlns:xlink="http://www.w3.org/1999/xlink">2 ) is used as control measure the impact of internal metal gate (IMG) also discussed. The was conducted by HZO seed layer fabricate gate-all-around (GAA) nanowire (NW); FeFET metal-ferroelectric–metal-insulator-semiconductor (MFMIS) structure; double (DL) channel. channel size in experiment approximately $9.6\times16$ nm 2 total thickness stack 9.2 nm. 50.5% less than our previous experiment. exhibits considerably high notation="LaTeX">${I}_{on}$ – notation="LaTeX">${I}_{off}$ ratio exceeding 107. IMG serves potential equalizer material arranged more symmetrical electric field. results lower (sub- notation="LaTeX">${V}_{TH}$ swing ( notation="LaTeX">$S.S._{min}=$ 49.3mV/decade) wide range notation="LaTeX">$10^{3}$ drain currentcompared that without IMG. findings indicate high-performance GAA FET can be achieved combining DL channel, NW, material,