Ultrafast Transport Transient in n-Doped ZnS in Wurtzite and Zincblende Phases

Zincblende and wurtzite phases in InN epilayers and their respective band transitions

Zincblende and wurtzite phases of InN are found in InN epilayers deposited by molecular beam epitaxy on GaN buffers which were grown by metal organic chemical vapor deposition. Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in both phases of InN. GaN buffer layers were used as VEELS reference. The chemistry and crystalline structure of the observed a...

Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measu...

Far-Infrared Dielectric Function of Zincblende ZnS

The complex dielectric response function of zincblende ZnS is determined a t 300 K by dispersive Fourier transform spectroscopy. The frequency range studied, 150 to 450 cm-l, spans the frequency of the q = 0 transverse optic (TO) phonon mode. The frequency dependence of the anharmonic self-energy function T(Y) of the q = 0 TO phonon is calculated from these data. The features observed in the sp...

Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals

Spatially resolved study of polarized micro-photoluminescence spectroscopy on single GaAs nanowires with mixed zincblende and wurtzite phases