Ultra-low leakage static random access memory design

An ultra-low leakage static random-access memory (SRAM) cell structure with 8 transistors is proposed in this paper. Compared to the 6T SRAM and other existing 8T cells, power of hold mode reduced significantly. The stability parameters are calculated using butterfly method also N-curve method. Proposed achieves better write margin slightly less read than SRAM. technique consumes 790 PW mode, which very compared techniques. Therefore, appropriate for applications. simulations carried out by Cadence (Virtuoso Schematic layout editor) tools GPDK45-nm technology.